X – RAY INTERFEROMETRIC INVESTIGATION OF STRUCTURAL DISTORTIONS IN SEMICONDUCTOR CRYSTALS UNDER THE INFLUENCE OF FAST ELECTRONS

Authors

  • A.O. ABOYAN National Polytechnic University of Armenia Author

Keywords:

interferometer, silicon monocrystal, density of radiation defects, radiation dose, moiré patterns

Abstract

An X-ray interferometric method for defining radiation pointed defects depending on the dose and depth of penetrating electron radiation using a three-crystal interferometer made of perfect silicon monocrystal with reflecting planes has been theoretically substantiated and experimentally realized (110). Relative deformations have been defined and the density of radiation defects depending on the radiation dose by fast electrons with energy 4,5 MeV has been calculated according to moiré patterns.

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Published

30.07.2026

Issue

Vol. 1 (2015)

Section

Articles