А NEW MODELING APPROACH TO SINGLE-DIODE MODEL OF SOLAR PANELS USING MULTISIM SOFTWARE

Abstract

There are many variations of the solar panel model, but the one with one diode and two (parallel and series) resistors is the most exploited model for PV panel investigation. In this scheme, the diode represents a semiconductor material of the solar cell and the series resistance represents the energy dissipated in the form of heat in the electric circuit. The doping of the semiconductors is not perfect, and hence there are defects in the solar panel. These defects can cause alternative paths (shunt), so this effect is presented as a shunt resistance in the circuit model.

Calculations for the solar panel model with one diode and two resistors were mainly carried out with MATLAB or other similar mathematical programs. Thus, these works are based on complex mathematical calculations. The proposed new modeling approach in this work is simpler from the implementation point of view, and also provides an equivalent accuracy.

In this work, a simulation of a solar panel model with one diode and two resistors is performed in the MULTISIM environment, taking as a basis the data of the BP MSX 120 datasheet. As a result of simulations, we have obtained the volt-ampere characteristics of the solar module of the mentioned model for temperatures of 0⁰C, 25⁰C, 50⁰C, 75⁰C.

We have compared the results with the results of the mathematical modeling and showed the viability of the proposed new modeling approach for PV panel exploration. Furthermore, we have compared the simulation data with measurement results and showed the temperature dependance of root-mean-square deviations of these data.