STUDYING THE I-V AND V-F CHARACTERISTICS OF A PHOTODETECTIVE STRUCTURE WITH OPPOSITELY ACTING POTENTIAL BARRIERS

Authors

E.A. MAKARYAN National Polytechnic University of Armenia Author

Keywords:

optical signal, photodetector, double-barrier structure, radiation spectrum

Abstract

The results of a study of the I-V and I-F characteristics of a semiconductor structure with oppositely acting potential barriers are presented. The relationship between I-V and I-F characteristics in the dark and in the light, as well as the relationship between the change in the sign of the photocurrent depending on the bias voltage at different wavelengths and the difference in the heights of potential barriers are revealed.

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23.03.2026

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