PROPERTIES OF ANNEALED BLACK SILICON
Keywords:
black silicon, reactive ion etching, annealing, structure, reflectionAbstract
The effect of heat treatment on the structural and optical properties of black silicon (b-Si) layers fabricated by the reactive ion etching method has been experimentally studied. It was shown that after annealing in N2 and O2 atmosphere at the temperature of 910°C structural properties of the b-Si layers vividly changed. Small needles disappear, and the rest become somewhat short. This leads to deterioration in the optical properties (reflection) of the b-Si layers.
