THE ELECTROMIGRATION AND VOLTAGE DROP CORRECTION METHODS OF ESD PROTECTION IN SPECIAL INPUT/OUTPUT

Abstract

In integral circuits voltage variations can entail the wrong work of the  circuit, be the reason for a logical error or even circuit failure. One of the reasons of voltage variation can be the ESD (electrostatic discharge) event. In modern integrated circuits(IC), there are implemented ESD protection circuits which are designed with consideration of different models, such as HBM (human body model) and CDM (charged device model). Secondary effects, such as electromigration and voltage drop can occur at the electrostatic discharge. Therefore, it is required to provide the ESD protection of the human body models by the fin field effect transistor’s (Finfet) neighbor metal layers methods of alignment and width to avoid electrostatic discharge, providing the work of special I/O junctions in the output of transmitter. The electromigration and voltage drop correction methods for ESD diodes are presented in this paper. The presented two methods are independent of technological deviations of parametrical changes, voltage and temperature changes in the system. While satisfying the electromigration and voltage drop technological requirements, it is necessary to provide small capacitance   and resistance in junctions. The presented methods can be applied in different technologies, but with relative accuracy, and can be applicable in different types of special I/O junctions, for example in Double Data Rate (DDR), Universal Serial Bus (USB), Peripheral Component Interconnect (PCI):