PHOTOCONDUCTIVITY OF Ga AND Li DOPED ZnO FILMS

Authors

E.Y. ELBAKYAN National Polytechnic University of Armenia Author

Keywords:

photoconductivity ZnO films, doped films, transparent electronics

Abstract

The electric and photoelectric characteristics of transparent ZnO films have been studied. The possibility of controlling the conductivity by introduction of impurities has been presented. The ratio of conductivity of the films doped with donor and acceptor impurities reaches the value of 10⁹. It is shown that at doping Li, providing a significant reduction in the dark conductivity without changing the conductivity type, it is possible to achieve a significant increase in the ratio of photoconductivity to the dark conductivity. This phenomenon can be used for the development of solid-state photodetectors of UV range.

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17.07.2026

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