OBTAINING SEMICONDUCTOR FILMS OF CADMIUM TELLURIDE BY THE ELECTROCHEMICAL METHOD ON THE SURFACE OF COPPER

ZH.R. PANOSYAN; H.N. KOCHARYAN; G.G. TOROSYAN; M.A. YERANOSYAN; YE.V. YENGIBARYAN; S.L. GRIGORYAN

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ZH.R. PANOSYAN National Polytechnic University of Armenia Author
H.N. KOCHARYAN National Polytechnic University of Armenia Author
G.G. TOROSYAN National Polytechnic University of Armenia Author
M.A. YERANOSYAN National Polytechnic University of Armenia Author
YE.V. YENGIBARYAN National Polytechnic University of Armenia Author
S.L. GRIGORYAN National Polytechnic University of Armenia Author

Keywords:

electrochemical-galvanostatic method of growth, thin CdTe films on the copper surface, p-type conductivity, X-ray studies, AFM images, surface potential of the substrate, roughness

Abstract

The possibility of obtaining thin CdTe films on the surface of a copper substrate for a thin-film solar cell (CdS /CdTe) is studied. The copper substrate served as an ohmic contact for the base layer of CdTe. X-ray studies of the structure of the CdTe films of cubic syngony and copper were carried out. The distribution of the roughness and surface potential of the substrate by an atomic force microscope (AFM) is determined.

OBTAINING SEMICONDUCTOR FILMS OF CADMIUM TELLURIDE BY THE ELECTROCHEMICAL METHOD ON THE SURFACE OF COPPER

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