DESIGN AND SIMULATION OF MODIFIED STATIC MEMORY CELLS 8TM

Authors

N.B. AVDALYAN National Polytechnic University of Armenia Author
K.O. PETROSYAN National Polytechnic University of Armenia Author

Keywords:

transistor memory cell, modeling, power, frequency, temperature

Abstract

A modified version of the static storage 8TM memory cell 8T is proposed. The simulation of power dissipation of the memory cell depending on the power supply voltage, the operating temperature and the frequency library with technological standards SAED EDK 28 nm is carried out. Modeling and calculations are performed by the software tool Hspice and BSIM 4 models.

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Published

30.07.2026

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