PHYSICAL PROPERTIES OF DONOR STATES NEAR THE SEMICONDUCTOR SURFACE IN AN EXTERNAL ELECTRIC FIELD

Abstract

The ground state energy and the extent of the wave function of a neutral donor located near the semiconductor surface in the presence of an electric field created by the Scanning Tunneling Microscope metallic tip (or a metallic sphere) is obtained within a variational approach that takes into account the influence of all image charges. The ionization process of a donor center due to the tip positive voltage is considered. A possibility of applying the results obtained to create a new type of gas detector (sensor) is discussed.