RESEARCH AND MODELING OF FIN FIELD EFFECT TRANSISTORS BASED ON THE BASIC ELEMENTS
Keywords:
Fin Field Effect transistor, Short gate (SG), Independent gate (IG), hybrid transistorAbstract
The structural peculiarities of transistors with a three dimentional gate Fin Field Effect (FinFet) used in Very Large Scale Integrated (VLSI) circuits are considered. The circuits of basic logic elements are based on FinFet transistors, their topology with a varying
