STUDYING THE PRODUCTION OF GRAPHENE-BASED MDS (METAL-DIELETRIC-SEMICONDUCTOR) TRANSISTOR
Keywords:
graphene, silicon substrate, aluminum gate, subgate aluminum dioxide dielectric,, gold outputsAbstract
In order to obtain the structure of a short channel MDS transistor based on graphene, the possibility of obtaining nanoscale grooves by means of two-beam interference lithography, the introduction of aluminum into them, the formation of aluminum oxide on the surface, the formation of graphene and the formation of gold protrusions on the edges, the possibility of obtaining MDS transistors, the dependence of the length of channel of the grooves on various factors is investigated.
