INVESTIGATING THE PHOTOELECTRONIC PROCESSES IN P+ - N - P+ STRUCTURES

Abstract

The absorption of electromagnetic waves and the processes photoelectric p⁺ - n - p⁺ structures have been investigated at the external bias voltage.

The connection potential between the photocurrents of the oppositely acting potential barriers with sharpness degree of p⁺ - n and n - p⁺ junctions have been revealed.

It is shown that in a wide range of the biased voltage, the photocurrent of the rear barrier exceeds that of the surface barrier.

The photoelectrical processes due to the individual wavelengths, occuring in the absorption medium at the change of its thickness, their motives and the possibility of determining the intensity and length of these waves are introduced.

The necessity of obtaining a photodetector semiconductor structure to create a cheap, fast analysis system suitable to be used in the field and having high spectral sensitivity is analyzed.

In the process of obtaining spectra of three LED - blue, green, red, the problems of obtaining spectral selective sensitivity of the considered photodetectors are investigated and ways of overcoming them are proposed.

A comparative analysis of selective sensitivity and the technology complexity of the obtained photodetectors with multi-layered semiconductor photodetectors having cascade active layers is carried out.

The qualitative relationship between the emission intensity and the degree of fluctuation of spectral photocurrents has been investigated. The possibility of implementing the process of optical spectrum analysis with the mentioned structures without high-precision mechanical devices, filters, prisms and diffraction gratings is considered. The possibility of using the investigated photodetector, in particular, for creating multi-monitor systems, obtaining information about the test environment and addressing important safety issues through the identification processes.