APPLICATION OF TEMPERATURE DEPENDENCE OF PARAMETERS IN A SINGLE-DIODE TWO-RESISTORS MODEL OF SOLAR PANEL WITH PARALLEL CONNECTED CELLS

Abstract

The need to take into account the temperature dependences of parallel and series resistances in the model of solar panels has been repeatedly proven in our previous works․ In the previous works, it can be seen how the inclusion of the temperature dependences of the specified elements in the model clearly improves the obtained I-V (current-voltage) characteristics, bringing them closer to the real characteristics given by the datasheet of the given panels. The improvement is evident not only from the obtained curves but also from the most important parameters calculated from them, such as root mean square deviation (RMSD) and the maximum power point (MPP). The latter almost perfectly coincide with the results of real measurements.

However, until now, we have studied only the cases of sequential connection of solar modules. In this work, we have applied the same method to the parallel circuit panel, in particular, we have applied the improved model to the simulation of the VDS-S144/M10H solar panel module in which the solar cells are connected in parallel. The purpose of this experiment is to once again prove the repeatability of the method regardless of the panel model and the way (serial or parallel) the cells are connected.