COULOMB INTERACTION ENERGY IN THIN OXID-BASED MOSFEET SYSTEMS
Keywords:
inversion channel, interaction potential, low (high) – k dielectric contrastAbstract
Inclusive analysis of the MOSFET structure inversion channel region-related real-space in the Coulomb interaction potential properties, considering the inhomogeneous and finite dielectric oxide background, is provided. In particular, the explicit dependence of the Coulomb potential on the thickness of the oxide layer is established. It is shown that the efficiency of the Coulomb interaction on a number of existing structures is the highest in the InSb/SiO2 MOSFET system.
