IMPURITY-LIMITED ELECTRON SCATTERING IN TiO2/InSb/TiO2 QUANTUM WELL NANOSTRUCTURES

Abstract

The effect of electronic and high-κ dielectric barrier quantum screening on the impurity-limited electron scattering in the TiO₂/InSb/TiO₂ two-dimensional (2D) nanostructure is considered. An analytical calculation model corresponding to the quantum well/high-κ dielectric barrier heterostructure under discussion is presented. A numerical analysis of the screened impurity interaction potential specific to InSb/TiO₂ heterojunction is implemented. A calculation of an electron momentum relaxation time ( ) is carried out taking info account both the finite mismatch of the energy bands at the InSb/TiO₂  heteroboundary and the energy band non-parabolicity of the InSb material. The contributions of screened potential compound 2D forms to  are established and compared related to the corresponding results for the HfO/InSb/HfO₂ 2D nanostructure.