ENERGY OF THE SCREENED COULOMB INTERACTION IN MOS STRUCTURE WITH THE DIELECTRIC ENVIRONMENT OF FINITE THICKNESS

Abstract

In the inversion channel of the MOS device structure the properties of the screened Coulomb interaction potential considering the finite thickness of the dielectric layer and the dielectric inhomogeneity of the environment are comprehensively discussed. The explicit dependences of the screened Coulomb potential on the dielectric constants of the semiconductor and oxide layer, as well as the oxide layer thickness are obtained. The analytical features of the received interaction potential are provided.