SCREENED IMPURITY SCATTERING RELAXATION TIME WITH THE QUANTUM WELL/HIGH-κ DIELECTRIC HETEROJUNCTION

Abstract

The screened impurity scattering probability is calculated in the presence of quantu­m well (QW) / high-κ dielectric heterojunction. It is found that: a) for the large values of quasi-two dimensional screening radius the QW/high-κ dielectric mismatch effect balances the influence of 2D screening, b) for the presented case the scattering relaxation time dependence from the electron energy is more strong than in the QW/low-κ dielectric type heterostructure case, c) the scattering relaxation time strongly depends on the QW thickness. The screened impurity scattering relaxation time numerical analysis for the realistic InSb/HfO₂ interface was performed.