ELECTRON SCATTERING IN SCREENED IMPURITY-DOPED HfO2/InSb/HfO2 HETEROSTRUCTURES

K.H.  AHARONYAN; A.Zh.  KHACHATRYAN; E.P.  KOKANYAN; L.R. SOGHOMONYAN

Authors

K.H. AHARONYAN National Polytechnic University of Armenia Author
A.Zh. KHACHATRYAN National Polytechnic University of Armenia Author
E.P. KOKANYAN National Polytechnic University of Armenia Author
L.R. SOGHOMONYAN National Polytechnic University of Armenia Author

Keywords:

Quantum well, high-κ dielectric, screening, impurity scattering

Abstract

The effect of screened ionized background impurities on electron scattering in HfO₂/InSb/HfO₂ two-dimensional (2D) nanostructure is considered. The expression of differential scattering cross-section depending on the 2D screened Coulomb potential analytical features is calculated analytically. A numerical analysis of the scattering relaxation time in the presence of electronic screening and quantum well/high-κ dielectric heterojunction effects is carried out. Taking these effects into account, a substantial suppression of electron scattering is obtained.

ELECTRON SCATTERING IN SCREENED IMPURITY-DOPED HfO2/InSb/HfO2 HETEROSTRUCTURES

Authors

Keywords:

Abstract

Downloads

Published

Issue

Section

Similar Articles

edtor