TRANSMISSION AND REFLECTION OF HOLES FROM SINGLE BARRIER IN A SEMICONDUCTOR HETEROSTRUCTURES

G.B. GRIGORYAN; A.G. POGHOSYAN; H.R. AVETISYAN; S.S. AVETISYAN; A.E. MANUKYAN

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G.B. GRIGORYAN National Polytechnic University of Armenia Author
A.G. POGHOSYAN National Polytechnic University of Armenia Author
H.R. AVETISYAN National Polytechnic University of Armenia Author
S.S. AVETISYAN National Polytechnic University of Armenia Author
A.E. MANUKYAN National Polytechnic University of Armenia Author

Keywords:

Light and heavy holes, quantum barrier, transmission and reflection coefficients

Abstract

The quantum mechanical problem of tunneling and reflection of holes from a barrier in a semiconductor heterojunction has been analyzed. By using the Luttinger Hamiltonian to describe the dynamics of holes, the inherent anisotropy, non-parabolicity and heavy and light hole mixing at the top of the valence band has been taken into account. The general relations among the reflectivities and transmissivities are obtained. These analytical results are complemented by numerical calculations for volt-ampere characteristics.

TRANSMISSION AND REFLECTION OF HOLES FROM SINGLE BARRIER IN A SEMICONDUCTOR HETEROSTRUCTURES

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