THE EFFECTS OF NUCLEAR RADIATION ON SEMICONDUCTOR THIN FILMS

Abstract

The effect of nuclear radiation on the semiconductor crystal, depending on the radiation energy and on the intensity may be different. At low intensities, in the crystal-formed positions, there are no minimum number of atoms. In such vacancies can be localized carriers in a bound state. This feature should be taken into account when considering a nanofilm in which carriers are in a strong size quantization. Size quantization energy is much higher than the energy of localization of carriers at defects that occur during the radiation, therefore the impact of nuclear radiation on the state of the carriers can be taken into account as a perturbation. Calculations of optical absorption coefficient nanofilms show that the effect of nuclear radiation on a thin film reduces its ability to absorb light.