A COMPARATIVE STUDY OF VOLT-AMPETE CHARACTERISTIC OF THE W, Sn, C, Cr SELF-DIRECTED CHANNEL MEMRISTORS

Authors

H.R. DASHTOYAN National Polytechnic University of Armenia Author
T.D. GRIGORYAN National Polytechnic University of Armenia Author

Keywords:

memristor, self-directed channel, volt-ampete characteristic (I-V), hysteresis

Abstract

The characteristics of tungsten, chromium, tin, and carbon self-directed channel Knowm memristors were studied at up to 10 kHz. Besides, we have studied the switching voltages, resistances of HRS/LRS, and retention times. The characteristics were compared and the possibility of their application in logic embedded into memory devices were investigated.

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23.03.2026

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