A COMPARATIVE STUDY OF VOLT-AMPETE CHARACTERISTIC OF THE W, Sn, C, Cr SELF-DIRECTED CHANNEL MEMRISTORS

Authors

  • H.R. DASHTOYAN National Polytechnic University of Armenia Author
  • T.D. GRIGORYAN National Polytechnic University of Armenia Author

Keywords:

memristor, self-directed channel, volt-ampete characteristic (I-V), hysteresis

Abstract

The characteristics of tungsten, chromium, tin, and carbon self-directed channel Know­m memristors were studied at up to 10 kHz. Besides, we have studied the switching voltages, resistances of HRS/LRS, and retention times. The characteristics were compared and the possibility of their application in logic embedded into memory devices were investigated.

Downloads

Published

23.03.2026

Issue

Section

Articles

Most read articles by the same author(s)

Similar Articles

11-20 of 99

You may also start an advanced similarity search for this article.