COMPARATIVE ANALYSIS AND MODELLING OF THE CHARACTERISTICS OF CMOS STATIC ACCESS MEMORY WITH DIFFERENT INFORMATION CAPACITIES
Keywords:
memory cell, storage, simulation, synthesis, register transfer.Abstract
The synthesis of CMOS static random access memory with information capacity of 512 and 1024 bits using Design Compiler has been realized using a library with technological standards SAED EDK 28 nm. A new memory cell has been proposed on the basis of which a memory device with 512-bit information capacity has been synthasized. A comparative analysis of the characteristics of the synthesized storage device has been performed.
