GETTERING THE STRUCTURAL DEFECTS BY A BLACK SILICON LAYER

Authors

A.V. AGHABEKYAN National Polytechnic University of Armenia Author

Keywords:

silicon substrate, black silicon, getter, oxidation, defect

Abstract

Silicon substrates by near-surface black silicon (b-Si) layer on the reverse side have been prepared and investigated. It is shown that the b-Si layer as a getter significantly reduces the density of oxidation induced stacking faults on the working front side of silicon substrates.

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20.03.2026

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