SCREENED IMPURITIES IN THE FOUR-LAYER MOS SYSTEM

Abstract

In the inversion channel of the four-layer MOS system, the screened impurity Coulomb interaction potential properties are discussed. An explicit dependence of the effective screening parameter on the thicknesses of the passivation and oxide barrier layers, on their dielectric constants and the 2D EG carrier density is received. The typical physical results such as: a) enhancement of 2D EG carrier screening saturation effect, b) the dependence of the screening mechanism nature on the low-κ and high-κ types of the barrier dielectric layers are established and numerically analyzed.